STS4DNF60L
ActiveMOSFET TRANSISTOR, DUAL N CHANNEL, 4 A, 60 V, 0.045 OHM, 10 V, 1.7 V ROHS COMPLIANT: YES
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STS4DNF60L
ActiveMOSFET TRANSISTOR, DUAL N CHANNEL, 4 A, 60 V, 0.045 OHM, 10 V, 1.7 V ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | STS4DNF60L |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 4 A |
| Drain to Source Voltage (Vdss) | 60 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 15 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1030 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power - Max [Max] | 2 W |
| Rds On (Max) @ Id, Vgs | 55 mOhm |
| Supplier Device Package | 8-SOIC |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STS4DNF60L Series
This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based pocess. The resulting transistor shows extremely high packing density fow low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Documents
Technical documentation and resources