JAN2N7369

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Microsemi Corporation

TRANS PNP 80V 10A TO254AA

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Microsemi Corporation

TRANS PNP 80V 10A TO254AA

Technical Specifications

Parameters and characteristics for this part

Specification	JAN2N7369

DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Grade	Military
Mounting Type	Through Hole
Package / Case	TO-254-3, TO-254AA
Power - Max [Max]	115 W
Qualification	MIL-PRF-19500/621
Supplier Device Package	TO-254AA
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Qualification	Package / Case	Grade	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package
Microsemi Corporation JAN2N7369	115 W	80 V	Through Hole	PNP	50	MIL-PRF-19500/621	TO-254-3 TO-254AA	Military	1 V	TO-254AA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 1545.35

General part information

Bipolar (BJT) Transistor PNP 80 V 10 A 115 W Through Hole TO-254AA

Technical documentation and resources

No documents available