IPI530N15N3GXKSA1

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Infineon Technologies

MOSFET N-CH 150V 21A TO262-3

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Infineon Technologies

MOSFET N-CH 150V 21A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPI530N15N3GXKSA1

Current - Continuous Drain (Id) @ 25°C	21 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	8 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	887 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	68 W
Rds On (Max) @ Id, Vgs	53 mOhm
Supplier Device Package	PG-TO262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	FET Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies IPI530N15N3GXKSA1	-55 °C	175 ░C	53 mOhm	PG-TO262-3	I2PAK TO-262-3 Long Leads TO-262AA	12 nC	20 V	21 A	68 W	N-Channel	4 V	8 V 10 V	150 V	MOSFET (Metal Oxide)	Through Hole	887 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 150 V 21A (Tc) 68W (Tc) Through Hole PG-TO262-3

Technical documentation and resources

No documents available