IXTQ220N055T

Obsolete

IXYS

MOSFET N-CH 55V 220A TO3P

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Obsolete

IXYS

MOSFET N-CH 55V 220A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	IXTQ220N055T

Current - Continuous Drain (Id) @ 25°C	220 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	158 nC
Input Capacitance (Ciss) (Max) @ Vds	7200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max) [Max]	430 W
Rds On (Max) @ Id, Vgs	4 mOhm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]
IXYS IXTQ220N075T	7700 pF	10 V	220 A	-55 °C	175 ░C	N-Channel	MOSFET (Metal Oxide)	4 V	TO-3P	SC-65-3 TO-3P-3	4.5 mOhm	480 W	20 V	165 nC	Through Hole	75 V
IXYS IXTQ220N055T	7200 pF	10 V	220 A	-55 °C	175 ░C	N-Channel	MOSFET (Metal Oxide)	4 V	TO-3P	SC-65-3 TO-3P-3	4 mOhm		20 V	158 nC	Through Hole	55 V	430 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 55 V 220A (Tc) 430W (Tc) Through Hole TO-3P

Technical documentation and resources

No documents available