MCP14E3-E/P

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Microchip Technology

IC,DUAL MOSFET DRIVER,CMOS,DIP,8PIN,PLASTIC ROHS COMPLIANT: YES

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MCP14E3-E/P

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Microchip Technology

IC,DUAL MOSFET DRIVER,CMOS,DIP,8PIN,PLASTIC ROHS COMPLIANT: YES

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Description Specifications Series Pricing CAD Documents

Description

General part information

MCP14E3 Series

The MCP14E3/E4/E5 devices are a family of 4 A, dual output MOSFET gate drivers with separate enable functions for each output. These MOSFET gate drivers, the MCP14E3/E4/E5 can charge 2200 pF gate capacitance in under 15 ns (typical). The inputs are TTL/CMOS compatible, with 300 mV of hysteresis between the high and low input levels, providing noise immunity while allowing the device to be driven from slow rising and falling signals. The MCP14E3 offers dual inverting outputs, the MCP14E4 offers dual non-inverting outputs, and the MCP14E5 offers complimentary outputs.

Technical Specifications

Parameters and characteristics for this part

Specification	MCP14E3-E/P

Channel Type	Independent
Current - Peak Output (Sink)	4 A
Current - Peak Output (Source)	4 A
Driven Configuration	Low-Side
Fall Time (Typ)	18 ns
Gate Channel	N-Channel, P-Channel
Gate Type	IGBT, N-Channel, P-Channel MOSFET, MOSFET
Input Type	Inverting
Logic Voltage - VIH	2.4 V
Logic Voltage - VIL	0.8 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.3 in
Package Name	8-DIP, 8-PDIP
Package Width	7.62 mm
Rise Time (Typ)	15 ns
Voltage - Supply (Maximum)	18 V
Voltage - Supply (Minimum)	4.5 V

MCP14E3 Series

4.0A Dual High-Speed Power MOSFET Driver with Enable

Part	Gate Type	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Channel Type	Package Length	Package Width	Number of Drivers	Mounting Type	Logic Voltage - VIH	Logic Voltage - VIL	Driven Configuration	Gate Channel	Rise Time (Typ)	Fall Time (Typ)	Input Type	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Current - Peak Output (Source)	Current - Peak Output (Sink)	Package / Case
Microchip Technology MCP14E3T-E/SN	IGBT MOSFET N-Channel P-Channel MOSFET	8-SOIC	-40 °C	150 °C	Independent	0.154 in	3.9 mm	2	Surface Mount	2.4 V	0.8 V	Low-Side	N-Channel P-Channel	15 ns	18 ns	Inverting	18 V	4.5 V	4 A	4 A
Microchip Technology MCP14E3T-E/MF	IGBT MOSFET N-Channel P-Channel MOSFET	8-DFN-S	-40 °C	150 °C	Independent	6 mm	5 mm	2	Surface Mount	2.4 V	0.8 V	Low-Side	N-Channel P-Channel	15 ns	18 ns	Inverting	18 V	4.5 V	4 A	4 A	8-VDFN Exposed Pad
Microchip Technology MCP14E3-E/P	IGBT MOSFET N-Channel P-Channel MOSFET	8-DIP 8-PDIP	-40 °C	150 °C	Independent	0.3 in	7.62 mm	2	Through Hole	2.4 V	0.8 V	Low-Side	N-Channel P-Channel	15 ns	18 ns	Inverting	18 V	4.5 V	4 A	4 A
Microchip Technology MCP14E3-E/MF	IGBT MOSFET N-Channel P-Channel MOSFET	8-DFN-S	-40 °C	150 °C	Independent	6 mm	5 mm	2	Surface Mount	2.4 V	0.8 V	Low-Side	N-Channel P-Channel	15 ns	18 ns	Inverting	18 V	4.5 V	4 A	4 A	8-VDFN Exposed Pad
Microchip Technology MCP14E3-E/SN	IGBT MOSFET N-Channel P-Channel MOSFET	8-SOIC	-40 °C	150 °C	Independent	0.154 in	3.9 mm	2	Surface Mount	2.4 V	0.8 V	Low-Side	N-Channel P-Channel	15 ns	18 ns	Inverting	18 V	4.5 V	4 A	4 A