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IRL60B216 - TO-220AB PKG

IRL60B216

Obsolete
Infineon Technologies

STRONGIRFET™ N-CHANNEL ; TO-220 PACKAGE; 1.9 MOHM;

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IRL60B216 - TO-220AB PKG

IRL60B216

Obsolete
Infineon Technologies

STRONGIRFET™ N-CHANNEL ; TO-220 PACKAGE; 1.9 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRL60B216
Current - Continuous Drain (Id) @ 25°C195 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs258 nC
Input Capacitance (Ciss) (Max) @ Vds15570 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]375 W
Rds On (Max) @ Id, Vgs1.9 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

IRL60B216 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Documents

Technical documentation and resources

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