Technical Specifications
Parameters and characteristics for this part
| Specification | STP7N90K5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 7 A |
| Drain to Source Voltage (Vdss) | 900 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 17.7 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 425 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) [Max] | 110 W |
| Rds On (Max) @ Id, Vgs | 810 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STP7N90K5 Series
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Documents
Technical documentation and resources
AN4337
Application NotesDS11861
Product SpecificationsFlyers (5 of 6)
UM1575
User ManualsFlyers (5 of 6)
AN4250
Application NotesFlyers (5 of 6)
AN2842
Application NotesFlyers (5 of 6)
Flyers (5 of 6)
TN1225
Technical Notes & ArticlesAN2344
Application NotesTN1156
Technical Notes & ArticlesTN1378
Technical Notes & ArticlesTN1224
Technical Notes & ArticlesFlyers (5 of 6)
