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STP7N90K5 - N-channel 900 V 0.91 O typ. 6 A MDmesh K5 Power MOSFET in a TO-220 package

STP7N90K5

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STMicroelectronics

N-CHANNEL 900 V, 0.72 OHM TYP., 7 A MDMESH K5 POWER MOSFET IN A TO-220 PACKAGE

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STP7N90K5 - N-channel 900 V 0.91 O typ. 6 A MDmesh K5 Power MOSFET in a TO-220 package

STP7N90K5

Active
STMicroelectronics

N-CHANNEL 900 V, 0.72 OHM TYP., 7 A MDMESH K5 POWER MOSFET IN A TO-220 PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP7N90K5
Current - Continuous Drain (Id) @ 25°C7 A
Drain to Source Voltage (Vdss)900 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17.7 nC
Input Capacitance (Ciss) (Max) @ Vds425 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]110 W
Rds On (Max) @ Id, Vgs810 mOhm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.27
50$ 1.83
100$ 1.50
500$ 1.27
1000$ 1.08
2000$ 1.02
5000$ 0.99
10000$ 0.95
LCSCPiece 1$ 1.75
200$ 0.68
500$ 0.65
1000$ 0.64

Description

General part information

STP7N90K5 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.