IR1166SPBF

Obsolete

Infineon Technologies

IC GATE DRVR LOW-SIDE 8SOIC

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Obsolete

Infineon Technologies

IC GATE DRVR LOW-SIDE 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	IR1166SPBF

Channel Type	Single
Current - Peak Output (Source, Sink) [custom]	1 A
Current - Peak Output (Source, Sink) [custom]	4 A
Driven Configuration	Low-Side
Gate Type	N-Channel MOSFET, MOSFET (N-Channel)
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	2 V, 2.15 V
Mounting Type	Surface Mount
Number of Drivers	1
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-25 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	21 ns
Rise / Fall Time (Typ) [custom]	10 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	18 V
Voltage - Supply [Min]	11.4 V

Part	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Supplier Device Package	Channel Type	Gate Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Logic Voltage - VIL, VIH	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Supply [Max]	Voltage - Supply [Min]	Driven Configuration	Input Type	Number of Drivers	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type
Infineon Technologies IR1166SPBF	21 ns	10 ns	8-SOIC	Single	MOSFET (N-Channel) N-Channel MOSFET	1 A	4 A	2 V 2.15 V	-25 °C	125 °C	18 V	11.4 V	Low-Side	Non-Inverting	1	8-SOIC	3.9 mm	0.154 in	Surface Mount
Infineon Technologies IR1166STRPBF	21 ns	10 ns	8-SOIC	Single	N-Channel MOSFET	1 A	4 A	2 V 2.15 V	-25 °C	125 °C	18 V	11.4 V	Low-Side	Non-Inverting	1	8-SOIC	3.9 mm	0.154 in	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Low-Side Gate Driver IC Non-Inverting 8-SOIC

Technical documentation and resources