IGLD60R190D1AUMA1

Obsolete

Infineon Technologies

GAN N-CH 600V 10A LSON-8

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Obsolete

Infineon Technologies

GAN N-CH 600V 10A LSON-8

Technical Specifications

Parameters and characteristics for this part

Specification	IGLD60R190D1AUMA1

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	600 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	157 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-LDFN Exposed Pad
Power Dissipation (Max) [Max]	62.5 W
Supplier Device Package	PG-LSON-8-1
Technology	GaNFET (Gallium Nitride)
Vgs (Max) [Max]	-10 V
Vgs(th) (Max) @ Id	1.6 V

Part	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id	Vgs (Max) [Max]	Power Dissipation (Max) [Max]
Infineon Technologies IGLD60R190D1AUMA1	GaNFET (Gallium Nitride)	N-Channel	10 A	PG-LSON-8-1	Surface Mount	-55 °C	150 °C	157 pF	600 V	8-LDFN Exposed Pad	1.6 V	-10 V	62.5 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 10A (Tc) 62.5W (Tc) Surface Mount PG-LSON-8-1

Technical documentation and resources