MBRAD8200H

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Taiwan Semiconductor Corporation

8A, 200V, SCHOTTKY RECTIFIER

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Active

Taiwan Semiconductor Corporation

8A, 200V, SCHOTTKY RECTIFIER

Technical Specifications

Parameters and characteristics for this part

Specification	MBRAD8200H

Capacitance @ Vr, F	125 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	10 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Qualification	AEC-Q101
Speed	200 mA, 500 ns
Supplier Device Package	ThinDPAK
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	950 mV

Part	Voltage - Forward (Vf) (Max) @ If	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Package / Case	Current - Average Rectified (Io)	Speed	Mounting Type	Capacitance @ Vr, F	Grade	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Qualification
Taiwan Semiconductor Corporation MBRAD8200H	950 mV	Schottky	150 °C	-55 °C	10 µA	DPAK (2 Leads + Tab) SC-63 TO-252-3	8 A	200 mA 500 ns	Surface Mount	125 pF	Automotive	200 V	ThinDPAK	AEC-Q101

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General part information

Diode 200 V 8A Surface Mount ThinDPAK

Technical documentation and resources