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6A10-G - R6, Axial

6A10-G

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Comchip Technology

DIODE GEN PURP 1KV 6A R-6

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6A10-G - R6, Axial

6A10-G

Active
Comchip Technology

DIODE GEN PURP 1KV 6A R-6

Deep-Dive with AI

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification6A10-G6A10 Series
Capacitance @ Vr, F100 pF100 pF
Current - Average Rectified (Io)6 A6 A
Current - Reverse Leakage @ Vr10 çA10 çA
Mounting TypeThrough HoleThrough Hole
Operating Temperature - Junction [Max]125 °C125 °C
Operating Temperature - Junction [Min]-55 °C-55 °C
Package / CaseR-6, AxialR-6, Axial
SpeedStandard Recovery >500nsStandard Recovery >500ns
Speed200 mA200 mA
Supplier Device PackageR-6R-6
TechnologyStandardStandard
Voltage - DC Reverse (Vr) (Max) [Max]1000 V1000 V
Voltage - Forward (Vf) (Max) @ If1 V1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.60
10$ 0.51
100$ 0.36
Tape & Box (TB) 500$ 0.28
1000$ 0.23
2500$ 0.20
5000$ 0.19
12500$ 0.18
25000$ 0.17
50000$ 0.17

6A10 Series

DIODE GEN PURP 1KV 6A R-6

PartVoltage - DC Reverse (Vr) (Max) [Max]SpeedSpeedCurrent - Reverse Leakage @ VrCapacitance @ Vr, FCurrent - Average Rectified (Io)Package / CaseOperating Temperature - Junction [Min]Operating Temperature - Junction [Max]Supplier Device PackageTechnologyMounting TypeVoltage - Forward (Vf) (Max) @ If
Comchip Technology
6A10-G
1000 V
Standard Recovery >500ns
200 mA
10 çA
100 pF
6 A
R-6, Axial
-55 °C
125 °C
R-6
Standard
Through Hole
1 V
Comchip Technology
6A10B-G
1000 V
Standard Recovery >500ns
200 mA
10 çA
100 pF
6 A
R-6, Axial
-55 °C
125 °C
R-6
Standard
Through Hole
1 V

Description

General part information

6A10 Series

Diode 1000 V 6A Through Hole R-6

Documents

Technical documentation and resources

No documents available