DIODE GEN PURP 1KV 6A R-6
| Part | Voltage - DC Reverse (Vr) (Max) [Max] | Speed | Speed | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Current - Average Rectified (Io) | Package / Case | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Supplier Device Package | Technology | Mounting Type | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Comchip Technology 6A10-G | 1000 V | Standard Recovery >500ns | 200 mA | 10 çA | 100 pF | 6 A | R-6, Axial | -55 °C | 125 °C | R-6 | Standard | Through Hole | 1 V |
Comchip Technology 6A10B-G | 1000 V | Standard Recovery >500ns | 200 mA | 10 çA | 100 pF | 6 A | R-6, Axial | -55 °C | 125 °C | R-6 | Standard | Through Hole | 1 V |