AOTF12N60L

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 12A TO220F

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 12A TO220F

Technical Specifications

Parameters and characteristics for this part

Specification	AOTF12N60L

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Input Capacitance (Ciss) (Max) @ Vds	2100 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	50 W
Rds On (Max) @ Id, Vgs	550 mOhm
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Power Dissipation (Max) [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs
Alpha & Omega Semiconductor Inc. AOTF12N65	50 W	Through Hole	10 V	MOSFET (Metal Oxide)	-55 °C	150 °C	30 V	TO-220F	48 nC	N-Channel	12 A	TO-220-3 Full Pack	720 mOhm	650 V	4.5 V
Alpha & Omega Semiconductor Inc. AOTF12N60	50 W	Through Hole	10 V	MOSFET (Metal Oxide)	-55 °C	150 °C	30 V	TO-220F	50 nC	N-Channel	12 A	TO-220-3 Full Pack		600 V	4.5 V	2100 pF	550 mOhm
Alpha & Omega Semiconductor Inc. AOTF12N60L	50 W	Through Hole	10 V	MOSFET (Metal Oxide)	-55 °C	150 °C	30 V	TO-220F	50 nC	N-Channel	12 A	TO-220-3 Full Pack		600 V	4.5 V	2100 pF	550 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 12A (Tc) 50W (Tc) Through Hole TO-220F

Technical documentation and resources