STFI13NK60Z

Obsolete

STMicroelectronics

MOSFET N-CH 600V 13A I2PAKFP

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Obsolete

STMicroelectronics

MOSFET N-CH 600V 13A I2PAKFP

Technical Specifications

Parameters and characteristics for this part

Specification	STFI13NK60Z

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	92 nC
Input Capacitance (Ciss) (Max) @ Vds	2030 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262-3 Full Pack, I2PAK
Power Dissipation (Max) [Max]	35 W
Rds On (Max) @ Id, Vgs	550 mOhm
Supplier Device Package	TO-281 (I2PAKFP)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Package / Case	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs(th) (Max) @ Id	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STFI13NK60Z	N-Channel	2030 pF	Through Hole	550 mOhm	600 V	TO-262-3 Full Pack I2PAK	TO-281 (I2PAKFP)	13 A	35 W	92 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	4.5 V	30 V	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 13A (Tc) 35W (Tc) Through Hole TO-281 (I2PAKFP)

Technical documentation and resources