DMNH4026SSDQ-13

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Diodes Inc

40V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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Diodes Inc

40V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMNH4026SSDQ-13

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	7.5 A
Gate Charge (Qg) (Max) @ Vgs [Max]	8.8 nC
Input Capacitance (Ciss) (Max) @ Vds	1060 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rds On (Max) @ Id, Vgs	24 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

40V 175°C Dual N-Channel Enhancement Mode MOSFET

Part	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Configuration	Package / Case	Package / Case [y]	Package / Case [x]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id
Diodes Inc DMNH4026SSDQ-13	-55 °C	175 ░C	MOSFET (Metal Oxide)	2 N-Channel (Dual)	8-SOIC	3.9 mm	0.154 in	8.8 nC	1060 pF	7.5 A	Surface Mount	24 mOhm	8-SOIC	3 V

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General part information

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101 and supported by a PPAP.

Technical documentation and resources