BUK6D56-60EX

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Nexperia USA Inc.

POWER MOSFET, N CHANNEL, 60 V, 11 A, 56 MOHM, SOT-1220, 6 PINS, SURFACE MOUNT

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BUK6D56-60EX

Active

Nexperia USA Inc.

POWER MOSFET, N CHANNEL, 60 V, 11 A, 56 MOHM, SOT-1220, 6 PINS, SURFACE MOUNT

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Description Specifications Series Pricing CAD Documents

Description

General part information

BUK6D56-60E Series

N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	BUK6D56-60EX

Current - Continuous Drain (Id) (Ta)	4 A
Current - Continuous Drain (Id) (Tc)	11 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	12 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	435 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-UDFN Exposed Pad
Package Name	DFN2020MD-6
Power Dissipation (Max)	15 W, 2 W
Qualification	AEC-Q101
Rds On (Max)	56 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.7 V

BUK6D56-60E Series

Part	Input Capacitance (Ciss) (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Grade	Package Name	Package / Case	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	Gate Charge (Max)	Mounting Type	Qualification	Rds On (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type
Nexperia USA Inc. BUK6D56-60EX	435 pF	MOSFET (Metal Oxide)	-55 °C	175 °C	Automotive	DFN2020MD-6	6-UDFN Exposed Pad	11 A	4 A	2 W 15 W	10 V	4.5 V	2.7 V	12 nC	Surface Mount	AEC-Q101	56 mOhm	60 V	20 V	N-Channel