IXXH50N60C3D1

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IXYS

TRANSISTOR: IGBT; GENX3™; 600V; 50A; 600W; TO247-3

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Active

IXYS

TRANSISTOR: IGBT; GENX3™; 600V; 50A; 600W; TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IXXH50N60C3D1

Current - Collector (Ic) (Max) [Max]	100 A
Current - Collector Pulsed (Icm)	200 A
Gate Charge	64 nC
IGBT Type	PT
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	600 W
Reverse Recovery Time (trr)	25 ns
Supplier Device Package	IXXH
Supplier Device Package	TO-247AD
Switching Energy	330 µJ, 720 µJ
Td (on/off) @ 25°C	24 ns, 62 ns
Test Condition	36 A, 5 Ohm, 15 V, 360 V
Vce(on) (Max) @ Vge, Ic	2.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic	Switching Energy	IGBT Type	Gate Charge	Supplier Device Package	Supplier Device Package	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max)	Package / Case	Test Condition	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Reverse Recovery Time (trr)	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]
IXYS IXXH50N60B3	100 ns	27 ns	1.8 V	670 µJ 740 µJ	PT	70 nC	IXXH	TO-247AD	200 A	120 A	TO-247-3	5 Ohm 15 V 36 A 360 V	600 W	600 V	Through Hole
IXYS IXXH50N60B3D1	100 ns	27 ns	1.8 V	670 µJ 740 µJ	PT	70 nC	IXXH	TO-247AD	200 A	120 A	TO-247-3	5 Ohm 15 V 36 A 360 V	600 W	600 V	Through Hole	25 ns
IXYS IXXH50N60C3D1		24 ns 62 ns	2.3 V	330 µJ 720 µJ	PT	64 nC	IXXH	TO-247AD	200 A		TO-247-3	5 Ohm 15 V 36 A 360 V	600 W	600 V	Through Hole	25 ns	100 A	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT PT 600 V 100 A 600 W Through Hole TO-247AD (IXXH)

Technical documentation and resources

No documents available