SIDC06D65C8X1SA1

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Infineon Technologies

650 V, 20 A, EMITTER CONTROLLED DIODE 3

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SIDC06D65C8X1SA1

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Infineon Technologies

650 V, 20 A, EMITTER CONTROLLED DIODE 3

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SIDC06D65C8X1SA1

Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Die
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	Die
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	650 V

SIDC06D65 Series

Part	Mounting Type	Technology	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Package / Case	Speed	Speed
Infineon Technologies SIDC06D65C8X1SA1	Surface Mount	Standard	-40 °C	175 ░C	650 V	Die	Die	Standard Recovery >500ns	200 mA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

SIDC06D65 Series

Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.

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Technical documentation and resources