STU85N3LH5

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STMicroelectronics

MOSFET N-CH 30V 80A IPAK

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STMicroelectronics

MOSFET N-CH 30V 80A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	STU85N3LH5

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	14 nC
Input Capacitance (Ciss) (Max) @ Vds	1850 pF
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	70 W
Rds On (Max) @ Id, Vgs	5.4 mOhm
Supplier Device Package	TO-251 (IPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	22 V
Vgs(th) (Max) @ Id	2.5 V

MOSFET N-CH 30V 80A IPAK

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Vgs (Max)	Mounting Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Technology	Operating Temperature	Power Dissipation (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)
STMicroelectronics STU85N3LH5	14 nC	5.4 mOhm	IPAK, TO-251-3 Short Leads, TO-251AA	22 V	Through Hole	2.5 V	1850 pF	N-Channel	10 V	5 V	MOSFET (Metal Oxide)	175 °C	70 W	TO-251 (IPAK)	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 80A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)

Technical documentation and resources