STTH102A

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STMicroelectronics

FAST / ULTRAFAST DIODE, 200 V, 1 A, SINGLE, 900 MV, 20 NS, 40 A

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STMicroelectronics

FAST / ULTRAFAST DIODE, 200 V, 1 A, SINGLE, 900 MV, 20 NS, 40 A

Technical Specifications

Parameters and characteristics for this part

Specification	STTH102A

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 °C
Package / Case	DO-214AC, SMA
Reverse Recovery Time (trr)	20 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-214AC (SMA)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	970 mV

200 V 1 A Ultrafast Recovery Diode

Part	Reverse Recovery Time (trr)	Supplier Device Package	Current - Average Rectified (Io)	Speed	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Current - Reverse Leakage @ Vr	Technology
STMicroelectronics STTH102RL	20 ns	DO-41	1 A	200 mA 500 ns	Through Hole	970 mV	175 °C	200 V	Axial DO-204AL DO-41	1 µA	Standard
STMicroelectronics STTH102A	20 ns	DO-214AC (SMA)	1 A	200 mA 500 ns	Surface Mount	970 mV	175 °C	200 V	DO-214AC SMA	1 µA	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The STTH102 uses ST's new 200 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits.

Packaged in SMA and DO-41, the STTH102 is ideal for use as a free wheeling diode in power supplies and other power switching applications.

Technical documentation and resources