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STP8NK80Z - TO-220-3

STP8NK80Z

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STMicroelectronics

N-CHANNEL 800 V, 1.3 OHM, 6.2 A, TO-220 ZENER-PROTECTED SUPERMESH(TM) POWER MOSFET

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DocumentsDatasheet+13
STP8NK80Z - TO-220-3

STP8NK80Z

Active
STMicroelectronics

N-CHANNEL 800 V, 1.3 OHM, 6.2 A, TO-220 ZENER-PROTECTED SUPERMESH(TM) POWER MOSFET

Deep-Dive with AI

DocumentsDatasheet+13

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP8NK80Z
Current - Continuous Drain (Id) @ 25°C6.2 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs46 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1320 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)140 W
Rds On (Max) @ Id, Vgs1.5 Ohm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 3.23
50$ 2.56
100$ 2.20
500$ 1.95
1000$ 1.67
2000$ 1.57
5000$ 1.51
NewarkEach 1$ 1.42

Description

General part information

STP8NK80ZFP Series

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.