
FM25V01A-GTR
ActiveFERROELECTRIC RAM (FRAM), 128 KBIT, 16K X 8BIT, SPI, 40 MHZ, 2 V TO 3.6 V SUPPLY, SOIC-8
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FM25V01A-GTR
ActiveFERROELECTRIC RAM (FRAM), 128 KBIT, 16K X 8BIT, SPI, 40 MHZ, 2 V TO 3.6 V SUPPLY, SOIC-8
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Technical Specifications
Parameters and characteristics for this part
| Specification | FM25V01A-GTR |
|---|---|
| Clock Frequency | 40 MHz |
| Memory Format | FRAM |
| Memory Interface | SPI |
| Memory Organization | 16K x 8 |
| Memory Size | 16 kB |
| Memory Type | Non-Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Supplier Device Package | 8-SOIC |
| Technology | FRAM (Ferroelectric RAM) |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 2 V |
Pricing
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Description
General part information
FM25V01 Series
FM25V01A-GTR is a 128Kbit non-volatile memory in a 8 pin SOIC packaging. An F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other non-volatile memories. Unlike serial flash and EEPROM, the FM25V01A performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non-volatile memories. The FM25V01A is capable of supporting 10^14 read/write cycles, or 100 million times more write cycles than EEPROM. These capabilities make the FM25V01A ideal for non-volatile memory applications requiring frequent or rapid writes.
Documents
Technical documentation and resources