IR2101

Obsolete

Infineon Technologies

IC GATE DRVR HALF-BRIDGE 8DIP

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IR2101

Obsolete

Infineon Technologies

IC GATE DRVR HALF-BRIDGE 8DIP

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2101

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	360 mA
Current - Peak Output (Source, Sink) [custom]	210 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	0.8 V, 3 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	0.3 in
Package / Case	8-DIP
Package / Case	7.62 mm
Rise / Fall Time (Typ) [custom]	50 ns
Rise / Fall Time (Typ) [custom]	100 ns
Supplier Device Package	8-PDIP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IR2101 Series

Part	Supplier Device Package	Voltage - Supply [Max]	Voltage - Supply [Min]	Channel Type	Package / Case	Package / Case [y]	Package / Case [x]	Driven Configuration	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	High Side Voltage - Max (Bootstrap) [Max]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Number of Drivers	Gate Type	Logic Voltage - VIL, VIH	Input Type	Package / Case	Package / Case
Infineon Technologies IR2101STR	8-SOIC	20 V	10 VDC	Independent	8-SOIC	3.9 mm	0.154 in	Half-Bridge	150 °C	-40 °C	Surface Mount	50 ns	100 ns	600 V	360 mA	210 mA	2	IGBT N-Channel MOSFET	0.8 V 3 V	Non-Inverting
Infineon Technologies IR2101PBF	8-PDIP	20 V	10 VDC	Independent	8-DIP			Half-Bridge	150 °C	-40 °C	Through Hole	50 ns	100 ns	600 V	360 mA	210 mA	2	IGBT N-Channel MOSFET	0.8 V 3 V	Non-Inverting	0.3 in	7.62 mm
Infineon Technologies IR2101PBF	8-PDIP	20 V	10 VDC	Independent	8-DIP			Half-Bridge	150 °C	-40 °C	Through Hole	50 ns	100 ns	600 V	360 mA	210 mA	2	IGBT N-Channel MOSFET	0.8 V 3 V	Non-Inverting	0.3 in	7.62 mm
Infineon Technologies IR2101S	8-SOIC	20 V	10 VDC	Independent	8-SOIC	3.9 mm	0.154 in	Half-Bridge	150 °C	-40 °C	Surface Mount	50 ns	100 ns	600 V	360 mA	210 mA	2	IGBT N-Channel MOSFET	0.8 V 3 V	Non-Inverting
Infineon Technologies IR2101	8-PDIP	20 V	10 VDC	Independent	8-DIP			Half-Bridge	150 °C	-40 °C	Through Hole	50 ns	100 ns	600 V	360 mA	210 mA	2	IGBT N-Channel MOSFET	0.8 V 3 V	Non-Inverting	0.3 in	7.62 mm
Infineon Technologies IR2101SPBF	8-SOIC	20 V	10 VDC	Independent	8-SOIC	3.9 mm	0.154 in	Half-Bridge	150 °C	-40 °C	Surface Mount	50 ns	100 ns	600 V	360 mA	210 mA	2	IGBT N-Channel MOSFET	0.8 V 3 V	Non-Inverting

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IR2101 Series

Half-Bridge Gate Driver IC Non-Inverting 8-PDIP

Documents

Technical documentation and resources

No documents available