STGWA30HP65FB

Obsolete

STMicroelectronics

IGBT

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STGWA30HP65FB

Obsolete

STMicroelectronics

IGBT

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STGWA30HP65FB

Current - Collector (Ic) (Max) [Max]	60 A
Current - Collector Pulsed (Icm)	120 A
Gate Charge	149 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	260 W
Reverse Recovery Time (trr)	140 ns
Supplier Device Package	TO-247 Long Leads
Switching Energy	293 µJ
Td (on/off) @ 25°C	-/146ns
Test Condition	15 V, 400 V, 30 A, 10 Ohm
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max)	650 V

STGWA30HP65FB2 Series

Trench gate field-stop, 650 V, 30 A, high speed HB2 series IGBT in a TO-247 long leads package

Part	Reverse Recovery Time (trr)	Current - Collector Pulsed (Icm)	Test Condition	Switching Energy	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Supplier Device Package	Mounting Type	Td (on/off) @ 25°C	Td (on/off) @ 25°C	IGBT Type	Package / Case	Gate Charge	Voltage - Collector Emitter Breakdown (Max)	Switching Energy [custom]	Switching Energy [custom]	Voltage - Collector Emitter Breakdown (Max) [Max]	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Current - Collector (Ic) (Max)
STMicroelectronics STGWA30H65DFB	140 ns	120 A	10 Ohm 15 V 30 A 400 V	293 µJ 382 µJ	60 A	-55 °C	175 ░C	2 V	260 W	TO-247 Long Leads	Through Hole	46 ns	146 ns	Trench Field Stop	TO-247-3	149 nC	650 V
STMicroelectronics STGWA30H60DFB	53 ns	120 A	10 Ohm 15 V 30 A 400 V		60 A	-55 °C	175 ░C	2 V	260 W	TO-247 Long Leads	Through Hole	37 ns 146 ns		Trench Field Stop	TO-247-3	149 nC		383 µJ	293 µJ	600 V
STMicroelectronics STGWA30HP65FB	140 ns	120 A	10 Ohm 15 V 30 A 400 V	293 µJ	60 A	-55 °C	175 ░C	2 V	260 W	TO-247 Long Leads	Through Hole			Trench Field Stop	TO-247-3	149 nC	650 V				-/146ns
STMicroelectronics STGWA30H65FB		120 A	10 Ohm 15 V 30 A 400 V	151 mJ 293 mJ	60 A	-55 °C	175 ░C	2 V	260 W	TO-247 Long Leads	Through Hole	37 ns 146 ns		Trench Field Stop	TO-247-3	149 nC	650 V
STMicroelectronics STGWA30HP65FB2	140 ns	90 A	6.8 Ohm 15 V 30 A 400 V			-55 °C	175 ░C	2.1 V	167 W	TO-247 Long Leads	Through Hole			Trench Field Stop	TO-247-3	90 nC	650 V				-	71 ns	50 A
STMicroelectronics STGWA30H65DFB2	115 ns	90 A	6.8 Ohm 15 V 30 A 400 V	270 µJ 310 µJ		-55 °C	175 ░C	2.1 V	167 W	TO-247 Long Leads	Through Hole			Trench Field Stop	TO-247-3	90 nC	650 V					18.4 ns 71 ns	50 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

STGWA30HP65FB2 Series

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat)behavior at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.

Documents

Technical documentation and resources

No documents available