IPB80N04S404ATMA1

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Infineon Technologies

TRANS MOSFET N-CH 40V 80A 3-PIN(2+TAB) D2PAK T/R AUTOMOTIVE AEC-Q101

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Infineon Technologies

TRANS MOSFET N-CH 40V 80A 3-PIN(2+TAB) D2PAK T/R AUTOMOTIVE AEC-Q101

Technical Specifications

Parameters and characteristics for this part

Specification	IPB80N04S404ATMA1

Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	43 nC
Input Capacitance (Ciss) (Max) @ Vds	3440 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	71 W
Rds On (Max) @ Id, Vgs	4.2 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max)	Supplier Device Package	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Max Rds On, Min Rds On)
Infineon Technologies IPB80N04S404ATMA1	71 W	PG-TO263-3-2	Surface Mount	-55 °C	175 ░C	4.2 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3440 pF	43 nC	20 V	MOSFET (Metal Oxide)	4 V	40 V	N-Channel	10 V

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General part information

N-Channel 40 V 80A (Tc) 71W (Tc) Surface Mount PG-TO263-3-2

Technical documentation and resources