UMG4N-7

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Diodes Inc

100@1MA,5V 2 NPN-PRE-BIASED 150MW 100MA 50V SOT-353 DIGITAL TRANSISTORS ROHS

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Active

Diodes Inc

100@1MA,5V 2 NPN-PRE-BIASED 150MW 100MA 50V SOT-353 DIGITAL TRANSISTORS ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	UMG4N-7

Current - Collector (Ic) (Max) [Max]	100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SC-70-5, 5-TSSOP, SOT-353
Supplier Device Package	SOT-353
Transistor Type	2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Transistor Type	Package / Case	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]
Diodes Inc UMG4N-7	2 NPN - Pre-Biased (Dual)	5-TSSOP SC-70-5 SOT-353	100 mA	SOT-353	300 mV	Surface Mount	250 MHz	100	50 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount SOT-353

Technical documentation and resources