Technical Specifications
Parameters and characteristics for this part
| Specification | STGP6NC60HD |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 15 A |
| Current - Collector Pulsed (Icm) | 21 A |
| Gate Charge | 13.6 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 56 W |
| Reverse Recovery Time (trr) | 21 ns |
| Supplier Device Package | TO-220 |
| Td (on/off) @ 25°C | 12 ns |
| Td (on/off) @ 25°C | 76 ns |
| Test Condition | 3 A, 390 V, 15 V, 10 Ohm |
| Vce(on) (Max) @ Vge, Ic | 2.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGP6NC60HD Series
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advaced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.
Documents
Technical documentation and resources