IXFK150N15

Obsolete

IXYS

MOSFET N-CH 150V 150A TO264AA

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Obsolete

IXYS

MOSFET N-CH 150V 150A TO264AA

Technical Specifications

Parameters and characteristics for this part

Specification	IXFK150N15

Current - Continuous Drain (Id) @ 25°C	150 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	360 nC
Input Capacitance (Ciss) (Max) @ Vds	9100 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max) [Max]	560 W
Rds On (Max) @ Id, Vgs	12.5 mOhm
Supplier Device Package	TO-264AA (IXFK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Vgs (Max)	Technology	Vgs(th) (Max) @ Id	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs
IXYS IXFK150N15P	Through Hole	20 V	MOSFET (Metal Oxide)	5 V	N-Channel	190 nC	13 mOhm	10 V	TO-264-3 TO-264AA	TO-264AA (IXFK)	-55 °C	175 ░C	5800 pF	150 A	150 V	714 W
IXYS IXFK150N15	Through Hole	20 V	MOSFET (Metal Oxide)	4 V	N-Channel		12.5 mOhm	10 V	TO-264-3 TO-264AA	TO-264AA (IXFK)	-55 °C	150 °C	9100 pF	150 A	150 V	560 W	360 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 150 V 150A (Tc) 560W (Tc) Through Hole TO-264AA (IXFK)

Technical documentation and resources