
IDDD16G65C6XTMA1
ActiveSILICON CARBIDE SCHOTTKY DIODE, COOLSIC 6G SERIES, SINGLE, 650 V, 43 A, 21.5 NC, HDSOP
Deep-Dive with AI
Search across all available documentation for this part.

IDDD16G65C6XTMA1
ActiveSILICON CARBIDE SCHOTTKY DIODE, COOLSIC 6G SERIES, SINGLE, 650 V, 43 A, 21.5 NC, HDSOP
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IDDD16G65C6XTMA1 |
|---|---|
| Capacitance @ Vr, F | 783 pF |
| Current - Average Rectified (Io) | 43 A |
| Current - Reverse Leakage @ Vr | 53 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C |
| Package / Case | 10-PowerSOP Module |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | PG-HDSOP-10-1 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IDDD16 Series
Infineon Technologies introduces Double DPAK (D-DPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technologyCoolSiC™ Schottky diode 650 V G6is combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.
Documents
Technical documentation and resources