IKB03N120H2ATMA1

Obsolete

Infineon Technologies

IGBT 1200V 9.6A 62.5W TO263-3

Search across all available documentation for this part.

Obsolete

Infineon Technologies

IGBT 1200V 9.6A 62.5W TO263-3

Technical Specifications

Parameters and characteristics for this part

Specification	IKB03N120H2ATMA1

Current - Collector (Ic) (Max) [Max]	9.6 A
Current - Collector Pulsed (Icm)	9.9 A
Gate Charge	22 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power - Max [Max]	62.5 W
Reverse Recovery Time (trr)	42 ns
Supplier Device Package	PG-TO263-3-2
Switching Energy	290 µJ
Td (on/off) @ 25°C	9.2 ns, 281 ns
Test Condition	15 V, 3 A, 82 Ohm, 800 V
Vce(on) (Max) @ Vge, Ic	2.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Current - Collector (Ic) (Max) [Max]	Test Condition	Switching Energy	Reverse Recovery Time (trr)	Gate Charge	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Td (on/off) @ 25°C	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Mounting Type
Infineon Technologies IKB03N120H2ATMA1	9.6 A	3 A 15 V 82 Ohm 800 V	290 µJ	42 ns	22 nC	150 °C	-40 °C	PG-TO263-3-2	9.2 ns 281 ns	62.5 W	1200 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	9.9 A	2.8 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT 1200 V 9.6 A 62.5 W Surface Mount PG-TO263-3-2

Technical documentation and resources