FZT688BTA

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Diodes Inc

POWER BIPOLAR TRANSISTOR, 4A I(C), 12V V(BR)CEO, 1-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 4 PIN,

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Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 4A I(C), 12V V(BR)CEO, 1-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 4 PIN,

Technical Specifications

Parameters and characteristics for this part

Specification	FZT688BTA

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	400 hFE
Frequency - Transition	150 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	2 W
Supplier Device Package	SOT-223-3
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	12 V

NPN, 12V, 4A, SOT223

Part	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Transistor Type	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Diodes Inc FZT688BTA	2 W	12 V	Surface Mount	SOT-223-3	4 A	-55 °C	150 °C	100 nA	150 MHz	NPN	TO-261-4 TO-261AA	400 hFE

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General part information

NPN, 12V, 4A, SOT223

Technical documentation and resources