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STHU36N60DM6AG - HU3PAK

STHU36N60DM6AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 600 V, 84 MOHM TYP., 29 A MDMESH DM6 POWER MOSFET IN AN HU3PAK PACKAGE

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STHU36N60DM6AG - HU3PAK

STHU36N60DM6AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 600 V, 84 MOHM TYP., 29 A MDMESH DM6 POWER MOSFET IN AN HU3PAK PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTHU36N60DM6AG
Current - Continuous Drain (Id) @ 25°C29 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs46 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1960 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max)210 W
Rds On (Max) @ Id, Vgs99 mOhm
Supplier Device PackageHU3PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4.75 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 6.45
10$ 5.80
25$ 5.48
100$ 4.75
250$ 4.51
Digi-Reel® 1$ 6.45
10$ 5.80
25$ 5.48
100$ 4.75
250$ 4.51
Tape & Reel (TR) 600$ 3.29
1200$ 3.13
1800$ 3.05
3000$ 3.01
NewarkEach (Supplied on Cut Tape) 1$ 5.79
10$ 4.44
25$ 4.10
50$ 3.91
100$ 3.73
250$ 3.55

Description

General part information

STHU36N60DM6AG Series

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Documents

Technical documentation and resources