DCG130X1200NA

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IXYS

DIODE MOD SIC 1200V 64A SOT227B

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IXYS

DIODE MOD SIC 1200V 64A SOT227B

Technical Specifications

Parameters and characteristics for this part

Specification	DCG130X1200NA

Current - Average Rectified (Io) (per Diode)	64 A
Current - Reverse Leakage @ Vr	800 µA
Diode Configuration	2 Independent
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	SOT-227-4, miniBLOC
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	SOT-227B
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

DIODE MOD SIC 1200V 64A SOT227B

Part	Speed	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Diode Configuration	Technology	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io) (per Diode)	Package / Case	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Supplier Device Package	Mounting Type	Reverse Recovery Time (trr)
IXYS DCG130X1200NA	No Recovery Time	1.8 V	1.2 kV	2 Independent	SiC (Silicon Carbide) Schottky	800 µA	64 A	SOT-227-4, miniBLOC	-40 °C	175 ░C	SOT-227B	Chassis Mount	0 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 2 Independent 1200 V 64A Chassis Mount SOT-227-4, miniBLOC

Technical documentation and resources