IPB05N03LB

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Infineon Technologies

MOSFET N-CH 30V 80A TO263-3

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Unknown

Infineon Technologies

MOSFET N-CH 30V 80A TO263-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPB05N03LB

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds	3209 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	94 W
Rds On (Max) @ Id, Vgs	5 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Package / Case	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)
Infineon Technologies IPB05N03LB	-55 °C	175 ░C	N-Channel	20 V	25 nC	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	5 mOhm	2 V	94 W	30 V	PG-TO263-3-2	3209 pF	Surface Mount	4.5 V 10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 80A (Tc) 94W (Tc) Surface Mount PG-TO263-3-2

Technical documentation and resources