BDP949H6327XTSA1

Infineon Technologies

TRANS GP BJT NPN 60V 3A AUTOMOTIVE AEC-Q101 4-PIN(3+TAB) SOT-223 T/R

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Infineon Technologies

TRANS GP BJT NPN 60V 3A AUTOMOTIVE AEC-Q101 4-PIN(3+TAB) SOT-223 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	BDP949H6327XTSA1

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	5 W
Supplier Device Package	PG-SOT223-4-10
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

Part	Package / Case	Mounting Type	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Transistor Type	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]
Infineon Technologies BDP949H6327XTSA1	TO-261-4 TO-261AA	Surface Mount	100 MHz	100 nA	NPN	150 °C	100	500 mV	PG-SOT223-4-10	60 V	3 A	5 W

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General part information

Bipolar (BJT) Transistor NPN 60 V 3 A 100MHz 5 W Surface Mount PG-SOT223-4-10

Technical documentation and resources