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DMP31D7LW-13 - SOT-323

DMP31D7LW-13

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Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP31D7LW-13 - SOT-323

DMP31D7LW-13

Active
Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMP31D7LW-13
Current - Continuous Drain (Id) @ 25°C380 mA
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs0.36 nC
Input Capacitance (Ciss) (Max) @ Vds19 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-70, SOT-323
Power Dissipation (Max)290 mW
Rds On (Max) @ Id, Vgs900 mOhm
Supplier Device PackageSOT-323
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 10000$ 0.05
20000$ 0.05
30000$ 0.05
50000$ 0.04
70000$ 0.04
100000$ 0.04
250000$ 0.04

Description

General part information

DMP31D0UFB4 Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.