
IR2184PBF
NRNDEICEDRIVER™ 600 V HALF BRIDGE DRIVER IC WITH TYPICAL 1.9 A SOURCE AND 2.3 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT PDIP8 PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: ENABLE, SHOOT THROUGH PROTECTION, SHUTDOWN, SINGLE INPUT
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IR2184PBF
NRNDEICEDRIVER™ 600 V HALF BRIDGE DRIVER IC WITH TYPICAL 1.9 A SOURCE AND 2.3 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT PDIP8 PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: ENABLE, SHOOT THROUGH PROTECTION, SHUTDOWN, SINGLE INPUT
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Technical Specifications
Parameters and characteristics for this part
| Specification | IR2184PBF |
|---|---|
| Channel Type | Synchronous |
| Current - Peak Output (Source, Sink) [custom] | 2.3 A |
| Current - Peak Output (Source, Sink) [custom] | 1.9 A |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET, IGBT |
| High Side Voltage - Max (Bootstrap) [Max] | 600 V |
| Input Type | Non-Inverting |
| Logic Voltage - VIL, VIH | 2.7 V, 0.8 V |
| Mounting Type | Through Hole |
| Number of Drivers | 2 |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 0.3 in |
| Package / Case | 8-DIP |
| Package / Case | 7.62 mm |
| Rise / Fall Time (Typ) [custom] | 20 ns |
| Rise / Fall Time (Typ) [custom] | 40 ns |
| Supplier Device Package | 8-PDIP |
| Voltage - Supply [Max] | 20 V |
| Voltage - Supply [Min] | 10 VDC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IR2184 Series
The IR2184PBF is a high voltage high speed power MOSFET and IGBT Half-bridge Driver with dependent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output and down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
Documents
Technical documentation and resources