NE58219-T1-A

Obsolete

CEL

TRANSISTOR BIPOLAR .9GHZ 3-SMINI

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Obsolete

CEL

TRANSISTOR BIPOLAR .9GHZ 3-SMINI

Technical Specifications

Parameters and characteristics for this part

Specification	NE58219-T1-A

Current - Collector (Ic) (Max)	60 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	60
Frequency - Transition	5 GHz
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Power - Max [Max]	100 mW
Supplier Device Package	3-SuperMiniMold (19)
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12 V

TRANSISTOR BIPOLAR .9GHZ 3-SMINI

Part	Transistor Type	Package / Case	Supplier Device Package	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]	Current - Collector (Ic) (Max)
CEL NE58219-T1-A	NPN	SC-75, SOT-416	3-SuperMiniMold (19)	5 GHz	60	Surface Mount	12 V	100 mW	60 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

RF Transistor NPN 12V 60mA 5GHz 100mW Surface Mount 3-SuperMiniMold (19)

Technical documentation and resources