IPZ65R065C7XKSA1

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Infineon Technologies

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-247 4PIN PACKAGE; 65 MOHM; HIGHEST PERFORMANCE

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IPZ65R065C7XKSA1

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Infineon Technologies

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-247 4PIN PACKAGE; 65 MOHM; HIGHEST PERFORMANCE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPZ65R065C7XKSA1

Current - Continuous Drain (Id) @ 25°C	33 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	64 nC
Input Capacitance (Ciss) (Max) @ Vds	3020 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max) [Max]	171 W
Supplier Device Package	PG-TO247-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPZ65R065 Series

Part	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies IPZ65R065C7XKSA1	4 V	171 W	MOSFET (Metal Oxide)	33 A	-55 °C	150 °C	TO-247-4	Through Hole	N-Channel	20 V	650 V	PG-TO247-4	10 V	64 nC	3020 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 5.38
Digikey	Tube	1	$ 6.33
		10	$ 4.33
		100	$ 3.97
Newark	Each	1	$ 6.67
		10	$ 5.88
		25	$ 5.10
		50	$ 4.31
		100	$ 4.30
		480	$ 4.27

Description

General part information

IPZ65R065 Series

Infineon’sCoolMOS™ C7 superjunction MOSFETseries is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

Documents

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