Specification	MBRT200100

Current - Average Rectified (Io) (per Diode)	100 A
Current - Reverse Leakage	1 mA
Diode Configuration	Common Cathode
Diode Pair Count	1 pair
Mounting Type	Chassis Mount
Operating Temperature - Junction (Max)	150 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	Three Tower
Package Name	Three Tower
Speed - Fast Recovery (Maximum)	500 ns
Speed - Fast Recovery (Minimum)	200 mA
Technology	Schottky
Voltage - DC Reverse (Vr) (Max)	100 V
Voltage - Forward (Vf) (Max)	880 mV

MBRT200 Series

Part	Voltage - Forward (Vf) (Max)	Package Name	Current - Reverse Leakage	Current - Average Rectified (Io) (per Diode)	Package / Case	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Mounting Type	Technology	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)	Diode Pair Count	Diode Configuration	Voltage - DC Reverse (Vr) (Max)
GeneSiC Semiconductor MBRT200100R	880 mV	Three Tower	1 mA	100 A	Three Tower	150 °C	-55 °C	Chassis Mount	Reverse Polarity Schottky	500 ns	200 mA	1 pair	Common Anode	100 V
GeneSiC Semiconductor MBRT20080R	880 mV	Three Tower	1 mA	100 A	Three Tower	150 °C	-55 °C	Chassis Mount	Schottky	500 ns	200 mA	1 pair	Common Anode	80 V
GeneSiC Semiconductor MBRT20020R	750 mV	Three Tower	1 mA	100 A	Three Tower	150 °C	-55 °C	Chassis Mount	Schottky	500 ns	200 mA	1 pair	Common Anode	20 V
GeneSiC Semiconductor MBRT20060	800 mV	Three Tower	1 mA	100 A	Three Tower	150 °C	-55 °C	Chassis Mount	Schottky	500 ns	200 mA	1 pair	Common Cathode	60 V
GeneSiC Semiconductor MBRT20060R	800 mV	Three Tower	1 mA	100 A	Three Tower	150 °C	-55 °C	Chassis Mount	Schottky	500 ns	200 mA	1 pair	Common Anode	60 V
GeneSiC Semiconductor MBRT20020	750 mV	Three Tower	1 mA	100 A	Three Tower	150 °C	-55 °C	Chassis Mount	Schottky	500 ns	200 mA	1 pair	Common Cathode	20 V
GeneSiC Semiconductor MBRT200150R	880 mV	Three Tower	1 mA	100 A	Three Tower	150 °C	-55 °C	Chassis Mount	Schottky	500 ns	200 mA	1 pair	Common Anode	150 V
GeneSiC Semiconductor MBRT20045	750 mV	Three Tower	1 mA	100 A	Three Tower	150 °C	-55 °C	Chassis Mount	Schottky	500 ns	200 mA	1 pair	Common Cathode	45 V
GeneSiC Semiconductor MBRT20045R	750 mV	Three Tower	1 mA	100 A	Three Tower	150 °C	-55 °C	Chassis Mount	Schottky	500 ns	200 mA	1 pair	Common Anode	45 V
GeneSiC Semiconductor MBRT20045	750 mV	Three Tower	1 mA	100 A	Three Tower	150 °C	-55 °C	Chassis Mount	Schottky	500 ns	200 mA	1 pair	Common Cathode	45 V

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MBRT200100 | Datasheet