MBRT200 Series
Manufacturer: GeneSiC Semiconductor
DIODE MOD SCHOT 100V 100A 3TOWER
| Part | Voltage - Forward (Vf) (Max) | Package Name | Current - Reverse Leakage | Current - Average Rectified (Io) (per Diode) | Package / Case | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Mounting Type | Technology | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Diode Pair Count | Diode Configuration | Voltage - DC Reverse (Vr) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 880 mV | Three Tower | 1 mA | 100 A | Three Tower | 150 °C | -55 °C | Chassis Mount | Reverse Polarity Schottky | 500 ns | 200 mA | 1 pair | Common Anode | 100 V |
GeneSiC Semiconductor | 880 mV | Three Tower | 1 mA | 100 A | Three Tower | 150 °C | -55 °C | Chassis Mount | Schottky | 500 ns | 200 mA | 1 pair | Common Anode | 80 V |
GeneSiC Semiconductor | 750 mV | Three Tower | 1 mA | 100 A | Three Tower | 150 °C | -55 °C | Chassis Mount | Schottky | 500 ns | 200 mA | 1 pair | Common Anode | 20 V |
GeneSiC Semiconductor | 800 mV | Three Tower | 1 mA | 100 A | Three Tower | 150 °C | -55 °C | Chassis Mount | Schottky | 500 ns | 200 mA | 1 pair | Common Cathode | 60 V |
GeneSiC Semiconductor | 800 mV | Three Tower | 1 mA | 100 A | Three Tower | 150 °C | -55 °C | Chassis Mount | Schottky | 500 ns | 200 mA | 1 pair | Common Anode | 60 V |
GeneSiC Semiconductor | 750 mV | Three Tower | 1 mA | 100 A | Three Tower | 150 °C | -55 °C | Chassis Mount | Schottky | 500 ns | 200 mA | 1 pair | Common Cathode | 20 V |
GeneSiC Semiconductor | 880 mV | Three Tower | 1 mA | 100 A | Three Tower | 150 °C | -55 °C | Chassis Mount | Schottky | 500 ns | 200 mA | 1 pair | Common Anode | 150 V |
GeneSiC Semiconductor | 750 mV | Three Tower | 1 mA | 100 A | Three Tower | 150 °C | -55 °C | Chassis Mount | Schottky | 500 ns | 200 mA | 1 pair | Common Cathode | 45 V |
GeneSiC Semiconductor | 750 mV | Three Tower | 1 mA | 100 A | Three Tower | 150 °C | -55 °C | Chassis Mount | Schottky | 500 ns | 200 mA | 1 pair | Common Anode | 45 V |
GeneSiC Semiconductor | 750 mV | Three Tower | 1 mA | 100 A | Three Tower | 150 °C | -55 °C | Chassis Mount | Schottky | 500 ns | 200 mA | 1 pair | Common Cathode | 45 V |