ADP360120W3

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STMicroelectronics

AUTOMOTIVE-GRADE ACEPACK DRIVE POWER MODULE, SIXPACK TOPOLOGY 1200 V, 2.55 MOHM TYP. SIC MOSFET GEN.3 BASED

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Documents DS13817 +3

ADP360120W3

Active

STMicroelectronics

AUTOMOTIVE-GRADE ACEPACK DRIVE POWER MODULE, SIXPACK TOPOLOGY 1200 V, 2.55 MOHM TYP. SIC MOSFET GEN.3 BASED

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Documents DS13817 +3

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	ADP360120W3

Configuration	6 N-Channel
Current - Continuous Drain (Id) @ 25°C	379 A
Drain to Source Voltage (Vdss)	1200 V
Drain to Source Voltage (Vdss)	1.2 kV
Gate Charge (Qg) (Max) @ Vgs	944 nC
Input Capacitance (Ciss) (Max) @ Vds	28070 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	Module
Power - Max [Max]	704 W
Rds On (Max) @ Id, Vgs	3.45 mOhm
Supplier Device Package	ACEPACK
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	4.4 V

ADP360120W3 Series

Automotive-grade ACEPACK DRIVE power module, sixpack topology 1200 V, 2.55 mOhm typ. SiC MOSFET gen.3 based

Part	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Configuration	Power - Max [Max]	Technology	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics ADP360120W3	-40 C	175 °C	3.45 mOhm	944 nC	4.4 V	Chassis Mount	ACEPACK	1200 V	1.2 kV	28070 pF	Module	6 N-Channel	704 W	Silicon Carbide (SiC)	379 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tray	1	$ 2565.40

Description

General part information

ADP360120W3 Series

The ACEPACK DRIVE is a compact sixpack module optimized for hybrid and electric vehicles traction inverter. This power module features switches based on silicon carbide Power MOSFET 3rdgeneration, are characterized by very low RDS(on), very limited switching losses and outstanding performances in synchronous rectification working mode. This will ensure superb efficiency in final application, saving battery recharging cycles.

A copper base plate with pin-fin base structure make direct fluid cooling available for this power module minimizing thermal resistance.

A dedicated pin-out has been developed to get the best switching performances and press-fit pins will ensure optimal connection with driving board.