IQE013N04LM6ATMA1
ActiveOPTIMOS™ LOW-VOLTAGE POWER MOSFET 40V IN PQFN 3.3X3.3 SOURCE-DOWN -PACKAGE WITH INDUSTRY LEADING RDS(ON)
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IQE013N04LM6ATMA1
ActiveOPTIMOS™ LOW-VOLTAGE POWER MOSFET 40V IN PQFN 3.3X3.3 SOURCE-DOWN -PACKAGE WITH INDUSTRY LEADING RDS(ON)
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Technical Specifications
Parameters and characteristics for this part
| Specification | IQE013N04LM6ATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 205 A, 31 A |
| Drain to Source Voltage (Vdss) | 40 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 2.5 W, 107 W |
| Rds On (Max) @ Id, Vgs [Max] | 1.35 mOhm |
| Supplier Device Package | PG-TSON-8-4 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
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Description
General part information
IQE013 Series
Infineon has extended its innovativeSource-Downfamily with the IQE013N04LM6 1.35mOhm, 40V in a 3.3x3.3 PQFN package. This best-in-class power MOSFET optimizes the end user experience by challenging the status quo in power density and form factor. One target in power tool design is to minimize the internal restrictions of PCB area requirements, enabling a more ergonomic design. Moving the inverter from the handle into the head minimizes the volume of thepower toolmotor housing while simultaneously keeping the torque of the tool at a reasonably high level for quick and easy action.
Documents
Technical documentation and resources