JANTXV2N1711S
ActiveMicrochip Technology
NPN SILICON LOW-POWER 30V TO 60V, 0.5A
JANTXV2N1711S
ActiveMicrochip Technology
NPN SILICON LOW-POWER 30V TO 60V, 0.5A
Description
General part information
JANTXV2N1711S-Transistor Series
This specification covers the performance requirements for NPN, silicon, low-power, 2N1711 and 2N1890 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/225.
Technical Specifications
Parameters and characteristics for this part
| Specification | JANTXV2N1711S |
|---|---|
| Current - Collector (Ic) (Max) | 500 mA |
| Current - Collector Cutoff (Max) | 0.01 µA |
| DC Current Gain (hFE) (Min) | 100 |
| Grade | Military |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 200 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-39-3 Metal Can, TO-205AD |
| Package Name | TO-39 (TO-205AD) |
| Power - Max | 800 mW |
| Qualification | 225, MIL-PRF-19500 |
| Transistor Type | NPN |
| Vce Saturation (Max) | 1.5 V |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
Pricing
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