APT30GP60B2DLG

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Microsemi Corporation

IGBT PT 600V 100A TMAX

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Microsemi Corporation

IGBT PT 600V 100A TMAX

Technical Specifications

Parameters and characteristics for this part

Specification	APT30GP60B2DLG

Current - Collector (Ic) (Max) [Max]	100 A
Current - Collector Pulsed (Icm)	120 A
Gate Charge	90 nC
IGBT Type	PT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	463 W
Supplier Device Package	T-MAX™
Switching Energy	260 µJ, 250 µJ
Td (on/off) @ 25°C	55 ns
Td (on/off) @ 25°C	13 ns
Test Condition	5 Ohm, 15 V, 30 A, 400 V
Vce(on) (Max) @ Vge, Ic	2.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Input Capacitance (Cies) @ Vce	Current - Collector Cutoff (Max) [Max]	Input	Supplier Device Package	Power - Max [Max]	IGBT Type	Mounting Type	Current - Collector (Ic) (Max) [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Switching Energy	Test Condition	Current - Collector Pulsed (Icm)	Gate Charge
Microsemi Corporation APT30GP60JDQ1	600 V	3.2 nF	500 çA	Standard	ISOTOP®	245 W	PT	Chassis Mount	67 A	SOT-227-4 miniBLOC	-55 °C	150 °C	Single	2.7 V
Microsemi Corporation APT30GP60B2DLG	600 V				T-MAX™	463 W	PT	Through Hole	100 A	TO-247-3	-55 °C	150 °C		2.7 V	55 ns	13 ns	250 µJ 260 µJ	5 Ohm 15 V 30 A 400 V	120 A	90 nC
Microsemi Corporation APT30GP60LDLG	600 V				TO-264	463 W	PT	Through Hole	100 A	TO-264-3 TO-264AA	-55 °C	150 °C		2.7 V	55 ns	13 ns	250 µJ 260 µJ	5 Ohm 15 V 30 A 400 V	120 A	90 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT PT 600 V 100 A 463 W Through Hole T-MAX™

Technical documentation and resources

No documents available