FZT560TC

Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 0.15A I(C), 500V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 4 PIN, ROHS AND REACH COMPLIANT PACKAGE-4

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Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 0.15A I(C), 500V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 4 PIN, ROHS AND REACH COMPLIANT PACKAGE-4

Technical Specifications

Parameters and characteristics for this part

Specification	FZT560TC

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	60 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	2 W
Supplier Device Package	SOT-223-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	500 V

PNP, 500V, 0.15A, SOT223

Part	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Transistor Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type
Diodes Inc FZT560TC	100 nA	2 W	TO-261-4 TO-261AA	80	150 mA	PNP	SOT-223-3	-55 °C	150 °C	500 mV	60 MHz	500 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP, 500V, 0.15A, SOT223

Technical documentation and resources