AUIRLS4030-7TRL

Obsolete

Infineon Technologies

MOSFET N-CH 100V 190A D2PAK

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Obsolete

Infineon Technologies

MOSFET N-CH 100V 190A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRLS4030-7TRL

Current - Continuous Drain (Id) @ 25°C	190 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	140 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	11490 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK
Power Dissipation (Max) [Max]	370 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	3.9 mOhm
Supplier Device Package	D2PAK (7-Lead)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2.5 V

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Vgs (Max)	Technology	Power Dissipation (Max) [Max]	Grade	Rds On (Max) @ Id, Vgs	Qualification	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package
Infineon Technologies AUIRLS4030	N-Channel	11360 pF	4.5 V 10 V	2.5 V	16 V	MOSFET (Metal Oxide)	370 W	Automotive	4.3 mOhm	AEC-Q101	100 V	180 A	-55 °C	175 ░C	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Infineon Technologies AUIRLS4030-7TRL	N-Channel	11490 pF	4.5 V 10 V	2.5 V	16 V	MOSFET (Metal Oxide)	370 W	Automotive	3.9 mOhm	AEC-Q101	100 V	190 A	-55 °C	175 ░C	Surface Mount	D2PAK TO-263-7	140 nC	D2PAK (7-Lead)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 190A (Tc) 370W (Tc) Surface Mount D2PAK (7-Lead)

Technical documentation and resources