IPU60R2K1CEAKMA1

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Infineon Technologies

MOSFET, N-CH, 600V, 3.7A, TO-251

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Infineon Technologies

MOSFET, N-CH, 600V, 3.7A, TO-251

Technical Specifications

Parameters and characteristics for this part

Specification	IPU60R2K1CEAKMA1

Current - Continuous Drain (Id) @ 25°C	3.7 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.7 nC
Input Capacitance (Ciss) (Max) @ Vds	140 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	38 W
Rds On (Max) @ Id, Vgs	2.1 Ohm
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Drain to Source Voltage (Vdss)	FET Type	Mounting Type
Infineon Technologies IPU60R2K1CEAKMA1	20 V	150 °C	-40 °C	PG-TO251-3	3.5 V	10 V	140 pF	38 W	2.1 Ohm	3.7 A	MOSFET (Metal Oxide)	6.7 nC	IPAK TO-251-3 Short Leads TO-251AA	600 V	N-Channel	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 3.7A (Tc) 38W (Tc) Through Hole PG-TO251-3

Technical documentation and resources