SDT06S60

Obsolete

Infineon Technologies

DIODE SIL CARB 600V 6A TO220-2-2

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Obsolete

Infineon Technologies

DIODE SIL CARB 600V 6A TO220-2-2

Technical Specifications

Parameters and characteristics for this part

Specification	SDT06S60

Capacitance @ Vr, F	300 pF
Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	200 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	PG-TO220-2-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Speed	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Current - Average Rectified (Io)	Mounting Type	Supplier Device Package	Capacitance @ Vr, F	Reverse Recovery Time (trr)
Infineon Technologies SDT06S60	No Recovery Time	1.7 V	175 ░C	-55 C	200 µA	TO-220-2	600 V	SiC (Silicon Carbide) Schottky	6 A	Through Hole	PG-TO220-2-2	300 pF	0 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 6A Through Hole PG-TO220-2-2

Technical documentation and resources

No documents available