IR21363JTRPBF

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Infineon Technologies

THE IR21363J IS A 600 V THREE-PHASE GATE DRIVER IC WITH OVER CURRENT PROTECTION, ENABLE AND FAULT REPORTING

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IR21363JTRPBF

Active

Infineon Technologies

THE IR21363J IS A 600 V THREE-PHASE GATE DRIVER IC WITH OVER CURRENT PROTECTION, ENABLE AND FAULT REPORTING

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR21363JTRPBF

Channel Type	3-Phase
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Inverting
Logic Voltage - VIL, VIH	0.8 V, 3 V
Mounting Type	Surface Mount
Number of Drivers	6
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	32 Leads
Package / Case	44-LCC (J-Lead)
Rise / Fall Time (Typ) [custom]	125 ns
Rise / Fall Time (Typ) [custom]	50 ns
Supplier Device Package	44-PLCC, 32 Leads (16.58x16.58)
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	12 V

IR21363 Series

Part	Logic Voltage - VIL, VIH	Supplier Device Package	Package / Case	Package / Case	Number of Drivers	Mounting Type	High Side Voltage - Max (Bootstrap) [Max]	Gate Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Voltage - Supply [Min]	Voltage - Supply [Max]	Input Type	Channel Type	Driven Configuration	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case [x]	Package / Case [y]
Infineon Technologies IR21363JPBF	0.8 V 3 V	44-PLCC 32 Leads (16.58x16.58)	32 Leads	44-LCC (J-Lead)	6	Surface Mount	600 V	IGBT N-Channel MOSFET	125 ns	50 ns	12 V	20 V	Inverting	3-Phase	Half-Bridge	150 °C	-40 °C
Infineon Technologies IR21363SPBF	0.8 V 3 V	28-SOIC		28-SOIC	6	Surface Mount	600 V	IGBT N-Channel MOSFET	125 ns	50 ns	12 V	20 V	Inverting	3-Phase	Half-Bridge	150 °C	-40 °C	0.295 in	7.5 mm
Infineon Technologies IR21363JTRPBF	0.8 V 3 V	44-PLCC 32 Leads (16.58x16.58)	32 Leads	44-LCC (J-Lead)	6	Surface Mount	600 V	IGBT N-Channel MOSFET	125 ns	50 ns	12 V	20 V	Inverting	3-Phase	Half-Bridge	150 °C	-40 °C
Infineon Technologies IR21363STRPBF	0.8 V 3 V	28-SOIC		28-SOIC	6	Surface Mount	600 V	IGBT N-Channel MOSFET	125 ns	50 ns	12 V	20 V	Inverting	3-Phase	Half-Bridge	150 °C	-40 °C	0.295 in	7.5 mm
Infineon Technologies IR21363STRPBF	0.8 V 3 V	28-SOIC		28-SOIC	6	Surface Mount	600 V	IGBT N-Channel MOSFET	125 ns	50 ns	12 V	20 V	Inverting	3-Phase	Half-Bridge	150 °C	-40 °C	0.295 in	7.5 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 7.90
		10	$ 7.14
		25	$ 6.81
		100	$ 5.91
		250	$ 5.64
	Digi-Reel®	1	$ 7.90
		10	$ 7.14
		25	$ 6.81
		100	$ 5.91
		250	$ 5.64
	Tape & Reel (TR)	500	$ 4.11

Description

General part information

IR21363 Series

EiceDRIVER™ 600 Vthree phase half-bridge gate driver ICwith typical 0.2 A source and 0.35 A sink current, for 11.1 V/10.9 V UVLO, 400 ns/380 ns propagation delay, and 0.46 VITRIPpositive going threshold (VITRIP) in PLCC-44 package with junction-isolated level-shift technology forIGBTsandMOSFETs. For improved negative transient voltage robustness up to -100 V, integrated bootstrap diode (BSD), and 50% lower level shift losses, please check our Infineon SOI 600 V three phase gate driver6EDL04I06PT,6EDL04I06NT,6EDL04N06PT. Or6EDL04N02PRwhich is a 200 V, 3-phase gate driver available in TSSOP-28 package。

Documents

Technical documentation and resources

No documents available